Switching TKIs during CML therapy is frequent, mostly driven by intolerance, and does not affect survival: a prospective Quebec registry study
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Recent progress in spin-orbit torque magnetic random-access memory
Spin-orbit torque magnetic random-access memory (SOT-MRAM) offers promise for fast operation and high endurance but faces challenges such as low switching current, reliable field free switching, and back-end of line manufacturing processes. We review recent advancements in perpendicular SOT-MRAM devices, emphasizing on material developments to enhance charge-spin conversion efficiency and large-scale device integration strategies. We also discuss the remaining challenges in achieving a single device with low switching current, reliable field free switching to unlock the full potential of SOT-MRAM technology.
Uncovering two neutrophil-committed progenitors that immediately precede promyelocytes during human neutropoiesis
Technological advances have greatly improved our knowledge of myelopoiesis, for example, with the discovery of granulocyte‒monocyte‒dendritic cell (DC) progenitors (GMDPs), monocyte‒DC progenitors (MDPs), common DC progenitors (CDPs) and common monocyte progenitors (cMoPs) on the basis of flow cytometry approaches. Concomitantly, some progress has been made in characterizing the very early phases of human neutropoiesis with the description of novel CD66b+ progenitors, including eNePs, PMs w/o eNePs, ProNeus, and PreNeus. More recently, we identified four SSCloLin–CD66b–CD45dimCD34+/CD34dim/-CD64dimCD115– cells as the earliest precursors specifically committed to the neutrophil lineage present in human bone marrow (BM), which we called neutrophil-committed progenitors (NCPs, from NCP1s to NCP4s). In this study, we report the isolation and characterization of two new SSChiCD66b–CD64dimCD115–NCPs that, by phenotypic, transcriptomic, maturation and immunohistochemistry properties, as well as by flow cytometric side-scattered light (SSC), stand after NCP4s but precede promyelocytes during the neutropoiesis cascade. Similar to SSCloCD45RA+NCP2s/NCP3s and SSCloCD45RA–NCP1s/NCP4s, these cells exhibit phenotypic differences in CD45RA expression levels and, therefore, were named SSChiCD45RA+NCP5s and SSChiCD45RA–NCP6s. Moreover, NCP5s were more immature than NCP6s, as determined by cell differentiation and proliferative potential, as well as by transcriptomic and phenotypical features. Finally, by examining whether NCPs and all other CD66b+ neutrophil precursors are altered in representative hematological malignancies, we found that, in patients with chronic-phase chronic myeloid leukemia (CP-CML), but not with systemic mastocytosis (SM), there is an increased frequency of BM NCP4s, NCP6s, and all downstream CD45RA-negative neutrophil progenitors, suggesting their expansion in CML pathogenesis. Taken together, our data advance our knowledge of human neutropoiesis.
Solution-processable 2D materials for monolithic 3D memory-sensing-computing platforms: opportunities and challenges
Solution-processable 2D materials (2DMs) are gaining attention for applications in logic, memory, and sensing devices. This review surveys recent advancements in memristors, transistors, and sensors using 2DMs, focusing on their charge transport mechanisms and integration into silicon CMOS platforms. We highlight key challenges posed by the material’s nanosheet morphology and defect dynamics and discuss future potential for monolithic 3D integration with CMOS technology.
CDK8/19 inhibition attenuates G1 arrest induced by BCR-ABL antagonists and accelerates death of chronic myelogenous leukemia cells
Imatinib mesylate (IM) and other BCR-ABL tyrosine kinase inhibitors (BCR-ABLi) are the mainstay of chronic myelogenous leukemia (CML) treatment. However, activation of circumventing signaling pathways and quiescence may limit BCR-ABLi efficacy. CDK8/19 Mediator kinases have been implicated in the emergence of non-genetic drug resistance. Dissecting the effects of pharmacological CDK8/19 inhibition on CML survival in response to BCR-ABLi, we found that a selective, non-toxic CDK8/19 inhibitor (CDK8/19i) Senexin B (SenB) and other CDK8/19i sensitized K562 cells to different BCR-ABLi via attenuation of cell cycle arrest. In particular, SenB prevented IM-induced upregulation of genes that negatively regulate cell cycle progression. SenB also antagonized IM-activated p27Kip1 elevation thereby diminishing the population of G1-arrested cells. After transient G1 arrest, cells treated with IM + SenB re-entered the S phase, where they were halted and underwent replicative stress. Consequently, the combination of IM and SenB intensified apoptotic cell death, measured by activation of caspase 9 and 3, subsequent cleavage of poly(ADPriboso)polymerase 1, positive Annexin V staining and increase of subG1 fraction. In contrast, IM-treated BCR-ABL-positive KU812 CML cells, which did not induce p27Kip1, readily died regardless of SenB treatment. Thus, CDK8/19i prevent the quiescence-mediated escape from BCR-ABLi-induced apoptosis, suggesting a strategy for avoiding the CML relapse.
Quadruple-well ferroelectricity and moderate switching barrier in defective wurtzite α-Al2S3: a first-principles study
Wurtzite-type ferroelectrics are highly promising for next-generation microelectronic devices due to their ferroelectric properties and integration with exiting semiconductors. However, their high coercive fields, which are close to breakdown electric fields, need to be lowered. To deal with this issue and secure device reliability, much effort has been devoted to exploring novel wurtzite compounds with lower polarization switching barriers and implementing doping strategies. Here, we report first-principles calculations on polarization switching in cation-vacancy ordered wurtzite α-Al2S3, unveiling its uniaxial quadruple-well ferroelectricity and moderate switching barrier, 51 meV/cation, which is much lower than that of conventional wurtzite ferroelectrics. There are three important features relevant to the Al vacancies leading to the uncommon quadruple-well ferroelectricity and the moderate switching barrier: mitigation of cation-cation repulsion, structural flexibility that alleviates an in-plane lattice expansion, and formation of σ-like bonding states consisting of Al 3pz and S 3pz orbitals. Biaxial compressive strain and Ga doping lower the switching barriers by up to 40%. This study encourages experimental investigation of the ferroelectric properties for defective wurtzite α-Al2S3 as a new promising material with unconventional and intriguing ferroelectricity and suggests a potential strategy for reducing switching barriers in wurtzite ferroelectrics: introducing cation vacancies.
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