Atomically thin bioelectronics
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The enhanced ferroelectric properties of flexible Hf0.85Ce0.15O2 thin films based on in situ stress regulation
As the core component of ferroelectric memories, HfO2-based ferroelectric thin films play a crucial role in achieving their excellent storage performance. Here, we improved the ferroelectric properties and domain switching properties through in situ stress loading during annealing. The thin films are annealed under different bending states by applying different stress actions, and it is observed that, within a certain range of stress bending, the optimization of the ferroelectric properties of the annealed thin films can reach an extreme value. Specifically, under the influence of a small electric field, the 2Pr values of thin films annealed at +10 and −10 mm increased by 87.1% and 71.1%, respectively, compared with the unbent films. Additionally, these thin films exhibit extremely high domain wall mobility and excellent domain switching capabilities. Once the ferroelectric phase is formed through in situ stress modulation, it remains stable even under multiple service environments.
Photovoltaic bioelectronics merging biology with new generation semiconductors and light in biophotovoltaics photobiomodulation and biosensing
This review covers advancements in biosensing, biophotovoltaics, and photobiomodulation, focusing on the synergistic use of light, biomaterials, cells or tissues, interfaced with photosensitive dye-sensitized, perovskite, and conjugated polymer organic semiconductors or nanoparticles. Integration of semiconductor and biological systems, using non-invasive light-probes or -stimuli for both sensing and controlling biological behavior, has led to groundbreaking applications like artificial retinas. From fusion of photovoltaics and biology, a new research field emerges: photovoltaic bioelectronics.
Solution-processable 2D materials for monolithic 3D memory-sensing-computing platforms: opportunities and challenges
Solution-processable 2D materials (2DMs) are gaining attention for applications in logic, memory, and sensing devices. This review surveys recent advancements in memristors, transistors, and sensors using 2DMs, focusing on their charge transport mechanisms and integration into silicon CMOS platforms. We highlight key challenges posed by the material’s nanosheet morphology and defect dynamics and discuss future potential for monolithic 3D integration with CMOS technology.
Atomic scale determination of magnetism and stoichiometry at the La0.7Sr0.3MnO3/SrTiO3 interface: investigation of inverse hysteresis
Controlling the correlations and electronic reconstruction at the interface of transition metal oxide heterostructures provides a new pathway for tuning their unique physical properties. Here, we investigate the effects of interfacial nonstoichiometry and vertical phase separation on the magnetic properties and proximity-induced magnetism of epitaxial La0.7Sr0.3MnO3 (LSMO)/SrTiO3(001) oxide heterostructures. We also reinvestigate the recently observed inverse hysteresis behavior reported for this system, which we find emanates from the remanent field of the superconducting solenoid and not from antiferromagnetic intra-layer exchange coupling in low coercivity LSMO thin films. Combined atomically resolved electron energy loss spectroscopy, element-specific X-ray magnetic circular dichroism, and interface-sensitive polarized soft X-ray resonant magnetic reflectivity show the formation of a Mn3+-enriched interfacial LSMO layer, of a Ti3+-derived magnetic interface layer coupled ferromagnetically to La0.7Sr0.3MnO3, together with a small density of O-vacancies at the interface. These results not only advance the understanding of the magnetism and spin structure of correlated oxide interfaces but also hold promise for practical applications, especially in devices where the performance relies on the control and influence of spin polarization currents by the interfacial spin structure.
Enhanced energy storage in relaxor (1-x)Bi0.5Na0.5TiO3-xBaZryTi1-yO3 thin films by morphotropic phase boundary engineering
Perovskites at the crossover between ferroelectric and relaxor are often used to realize dielectric capacitors with high energy and power density and simultaneously good efficiency. Lead-free Bi0.5Na0.5TiO3 is gaining importance in showing an alternative to lead-based devices. Here we show that (1-x)Bi0.5Na0.5TiO3 – xBaZryTi1-yO3 (best: 0.94Bi0.5Na0.5TiO3 -0.06BaZr0.4Ti0.6O3) shows an increase of recoverable energy density and electric breakdown upon chemical substitution. In thin films derived from Chemical Solution Deposition, we observed that polarization peaks at the morphotropic phase boundary at x = 0.06. While Zr substitution results in reduced polarization, it enhances both efficiency and electric breakdown strength, ultimately doubling the recoverable energy density and the metallization interface by lowering surface roughness. Our dielectric capacitor shows <3% deviation of energy properties over 106 cycles. A virtual device model of a multilayer thin film capacitor (7.25 mJ recoverable energy) was used to compare its performance to already in use multilayer ceramic capacitors.
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